

Author: Ramachandran V. Brady M. Smith A. Feenstra R. Greve D.
Publisher: Springer Publishing Company
ISSN: 1543-186X
Source: Journal of Electronic Materials, Vol.27, Iss.4, 1998-04, pp. : 308-312
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content










Surface chemistry of porous silicon carbide
By Shin W. Seo W. Takai O. Koumoto K.
Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. :