Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors

By Tsai Chang-Da   Lee Ching-Ting  

Journal of Electronic Materials, Vol. 30, Iss. 2, 2001-02 ,pp. : 59-64

Springer Publishing Company

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Zn-Doped InGaP Grown by the LP- MOCVD

By Kúdela R.   Novak J.   Kucera M.  

Journal of Electronic Materials, Vol. 26, Iss. 1, 1997-12 ,pp. : 7-10

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Comparison of ECR plasma chemistries for etching of InGaP and AlGaP

By Hong J.   Lee J.   Abernathy C.   Pearton S.   Constantine C.   Hobson W.   Ren F.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1303-1309

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Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl 2 and BCl 3 chemistries

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Journal of Electronic Materials, Vol. 27, Iss. 3, 1998-03 ,pp. : 132-137

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Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap

By Lee K.   Lee J.   Hong J.   Abernathy C.   Pearton S.   Hobson W.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1279-1282

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