Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers—Grown by Hot-Wall CVD

Author: Wagner G.   Thomas B.   Doerschel J.   Dolle J.   Irmscher K.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 207-211

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract