Effects of Substrate Surface Preparation on Chemical Vapor Deposition Growth of 4H-SiC Epitaxial Layers

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Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 228-234

Springer Publishing Company

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Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers—Grown by Hot-Wall CVD

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Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

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Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p -Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

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