Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al x Ga 1−x N Using Dichlorofluoromethane (Halocarbon 12)

Author： Batoni P.   Patel K.   Burkhart C.   Shah T.   Iyengar V.   Ahrens M.   Morton S.   Bobbio S.   Stokes E.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.36, Iss.9, 2007-09, pp. : 1166-1173

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