Crack Development in a Low-Stress PBGA Package due to Continuous Recrystallization Leading to Formation of Orientations with [001] Parallel to the Interface

Author： Zhou Bite  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.39, Iss.12, 2010-12, pp. : 2669-2679

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High frequency wire bonding for PBGA package, a process optimisation approach

By Choon Teo Kiat   (Billie) Victor G. Corpuz  

Microelectronics International, Vol. 16, Iss. 3, 1999-12 ,pp. : 22-35

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Design of improved rail-to-rail low-distortion and low-stress switches in advanced CMOS technologies

By Galhardo A.  

Analog Integrated Circuits and Signal Processing, Vol. 64, Iss. 1, 2010-07 ,pp. : 13-22

Springer Publishing Company

Access to resources Recommend Favorite

In segregation effects during quantum dot and quantum ring formation on GaAs(001)

By Garcia J.M.   Granados D.   Silveira J.P.   Briones F.  

Microelectronics, Vol. 35, Iss. 1, 2004-01 ,pp. : 7-11

Elsevier

Access to resources Recommend Favorite

Electrical characterization of interface stability between magnesium and selenium-passivated n -type silicon (001)

By Udeshi D.   Ali M. Y.   Tao M.   Maldonado E.   Basit N.   Kirk W. P.  

International Journal of Electronics, Vol. 92, Iss. 12, 2005-12 ,pp. : 719-727

Taylor & Francis Ltd

Access to resources Recommend Favorite

The Pr 2 O 3 /Si(001) interface studied by synchrotron radiation photo-electron spectroscopy

By Schmeiszer D.   Mussig H.-J.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1607-1611

Elsevier

Access to resources Recommend Favorite