Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

Author： Lai F.-I.   Hsueh T.-H.   Chang Y.-h.   Shu W.-c.   Lai L.-H.   Kuo H.C.   Wang S.C.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1805-1809

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers

By Kuo H.C.   Chang Y.S.   Lai F.Y.   Hseuh T.H.   Chu L.T.   Laih L.H.   Wang S.C.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 483-485

Elsevier

Access to resources Recommend Favorite

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125011-125016

IOP Publishing

Access to resources Recommend Favorite

Numerical investigation of the effects of graded layer on the performance of AlGaAs/GaAs heterojunction bipolar transistors

By Debbar Nacer   Al-Hokail Hamad  

International Journal of Electronics, Vol. 87, Iss. 10, 2000-10 ,pp. : 1153-1162

Taylor & Francis Ltd

Access to resources Recommend Favorite

Electrical Activation Studies of Silicon-Implanted Al x Ga 1−x N with Aluminum Mole Fraction of 11% to 51%

By Moore E.  

Journal of Electronic Materials, Vol. 40, Iss. 1, 2011-01 ,pp. : 11-16

Springer Publishing Company

Access to resources Recommend Favorite

Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures

By Schuster J   Kim T Y   Batke E   Reuter D   Wieck A D  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85012-85017

IOP Publishing

Access to resources Recommend Favorite