Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit

Author: Matsuo N.   Kihara H.   Takami Y.  

Publisher: Elsevier

ISSN: 0038-1101

Source: Solid-State Electronics, Vol.47, Iss.11, 2003-11, pp. : 1969-1972

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content