Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion

Author： Su Y.K. Chen W.B. Lin C.L. Wang H.C. Chen S.M. Liang K.M.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.11, 2003-11, pp. : 2011-2014

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