Improved Ni ohmic contact on n-type 4H-SiC

By Hallin C.   Yakimova R.   Pécz B.   Georgieva A.   Marinova Ts.   Kasamakova L.   Kakanakov R.   Janzén E.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 119-122

Springer Publishing Company

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Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni

By Linchao Han   Huajun Shen   Kean Liu   Yiyu Wang   Yidan Tang   Yun Bai   Hengyu Xu   Yudong Wu   Xinyu Liu  

Journal of Semiconductors, Vol. 35, Iss. 7, 2014-07 ,pp. : 72003-72006

IOP Publishing

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

By Luckowski E.   Delucca J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 330-334

Springer Publishing Company

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Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

By Daves Walter  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1990-1997

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Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

By Vivona M   Greco G   Giannazzo F   Nigro R Lo   Rascunà S   Saggio M   Roccaforte F  

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