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Taylor & Francis Ltd

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A new procedure to extract the threshold voltage of MOSFETs using noise-reduction techniques

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Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

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Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

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A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT

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