Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

Author： Wang Qingpeng Jiang Ying Zhang Jiaqi Kawaharada Kazuya Li Liuan Wang Dejun Ao Jin-Ping

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|6|65004-65009

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.6, 2015-06, pp. : 65004-65009

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