Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET

Author： Saxena M. Haldar S. Gupta M. Gupta R.S.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.11, 2003-11, pp. : 2131-2134

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric

By Yurong Bai Jingping Xu Lu Liu Minmin Fan

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 94002-94007

IOP Publishing

Access to resources Recommend Favorite

Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

By Aouaj Abdellah Bouziane Ahmed NouaÇry Ahmed

International Journal of Electronics, Vol. 92, Iss. 8, 2005-08 ,pp. : 437-443

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

By Samuel T. S. Arun Balamurugan N. B.

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34002-34005

IOP Publishing

Access to resources Recommend Favorite

Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects

By Vimala P. Balamurugan N. B.

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34001-34005

IOP Publishing

Access to resources Recommend Favorite

Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

By Abuelma’atti M.T.

Analog Integrated Circuits and Signal Processing, Vol. 16, Iss. 3, 1998-08 ,pp. : 299-304

Springer Publishing Company

Access to resources Recommend Favorite