Implantation angle dependence of ion irradiation damage in GaN

Author： Nord J.   Nordlund K.   Pipeleers B.   Vantomme A.  

Publisher： Elsevier

ISSN： 0921-5107

Source： Materials Science and Engineering: B, Vol.105, Iss.1, 2003-12, pp. : 110-112

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GaN optical degradation during high energy Sn5+ ion irradiation

By Premchander P.   Baskar K.  

Journal of Materials Science, Vol. 45, Iss. 24, 2010-12 ,pp. : 6799-6804

Springer Publishing Company

Access to resources Recommend Favorite

Implantation and annealing studies of Tm-implanted GaN

By Lorenz K.   Alves E.   Wahl U.   Monteiro T.   Dalmasso S.   Martin R.W.   O'Donnell K.P.   Vianden R.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 96-99

Elsevier

Access to resources Recommend Favorite

Ion-implantation technology for improved GaAs MESFETs performance

By Liu C. H.   Wu L. W.   Chang S. J.   Chen J. F.   Liaw U. H.   Chen S. C.  

Journal of Materials Science: Materials in Electronics, Vol. 15, Iss. 2, 2004-02 ,pp. : 91-93

Springer Publishing Company

Access to resources Recommend Favorite

The structure and properties of dislocations in GaN

By Cherns D.   Hawkridge M.  

Journal of Materials Science, Vol. 41, Iss. 9, 2006-05 ,pp. : 2685-2690

Springer Publishing Company

Access to resources Recommend Favorite

Defect structure in GaN pyramids

By Farrer Jeffrey   Carter C.  

Journal of Materials Science, Vol. 41, Iss. 3, 2006-02 ,pp. : 779-792

Springer Publishing Company

Access to resources Recommend Favorite