Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

By Hommerich U.   Nyein E.E.   Lee D.S.   Heikenfeld J.   Steckl A.J.   Zavada J.M.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 90-95

Elsevier

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Research on the Mn-implanted GaN with ferromagnetism at room temperature

By Xu J.   Li J.   Zhang R.   Xiu X.Q.   Lu D.Q.   Yu H.Q.   Gu S.L.   Shen B.   Shi Y.   Ye Y.D.   Zheng Y.D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 163-167

Elsevier

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Lattice location and optical activation of rare earth implanted GaN

By Wahl U.   Alves E.   Lorenz K.   Correia J.G.   Monteiro T.   De Vries B.   Vantomme A.   Vianden R.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 132-140

Elsevier

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Implantation angle dependence of ion irradiation damage in GaN

By Nord J.   Nordlund K.   Pipeleers B.   Vantomme A.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 110-112

Elsevier

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Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN

By Braud A.   Doualan J.L.   Moncorge R.   Pipeleers B.   Vantomme A.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 100-104

Elsevier

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