Crystallization of amorphous Si 0.5 Ge 0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

By Edelman F.   Raz T.   Komem Y.   Zaumseil P.   Osten H. -J.   Capitan M.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 79, Iss. 11, 1999-11 ,pp. : 2617-2628

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TEM study of electron beam-induced crystallization of amorphous GeSi films

By Xu Z. W.   Ngan A. H. W.  

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Transmission electron microscopy investigation of the structural characteristics of amorphous tetrahedral carbon films

By Lioutas C.B.   Vouroutzis N.   Logothetidis S.   Lefakis H.  

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Elsevier

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In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures

By Stach E. A.   Hull R.   Tromp R. M.   Ross F. M.   Reuter M. C.   Bean J. C.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 9, 2000-09 ,pp. : 2159-2200

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Temperature- and electron-beam-induced crystallization of zirconia thin films deposited from an aqueous medium: a transmission electron microscopy study

By Roddatis V. V.   Su D. S.   Jentoft F. C.   Schlögl R.  

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