Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

Author： Brunkov P.   Gutkin A.   Rudinsky M.   Ronghin O.   Sitnikova A.   Shakhmin A.   Ber B.   Kazantsev D.   Egorov A.   Zemlyakov V.   Konnikov S.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 811-817

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