Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD

Author： Ferrandis P.   Vescan L.   Hollander B.   Dashtizadeh V.   Dieker C.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 507-509

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

ANNEALING INDUCED DEGRADATION OF THERMAL SiO2 ON (1 0 0)Si: POINT DEFECT GENERATION

By STESMANS A.   PIERREUX D.   AFANAS'EV V. V.  

Radiation Effects and Defects in Solids, Vol. 158, Iss. 1-6, 2003-01 ,pp. : 419-425

Taylor & Francis Ltd

Access to resources Recommend Favorite

Atomic structures of Si and Ge Σ = 13 [0 0 1] tilt grain boundaries studied by high-resolution electron microscopy and atomistic simulations

By Rouvière Jean-Luc  

Philosophical Magazine, Vol. 93, Iss. 10-12, 2013-04 ,pp. : 1230-1249

Taylor & Francis Ltd

Access to resources Recommend Favorite

Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

By Tohidi Tavakkol   Jamshidi-Ghaleh Kazem  

Philosophical Magazine, Vol. 94, Iss. 29, 2014-10 ,pp. : 3368-3381

Taylor & Francis Ltd

Access to resources Recommend Favorite

Nucleation and evolution of Si 1-x Ge x islands on Si(001)

By Volpi F.   Portavoce A.   Ronda A.   Shi Y.   Gay J.M.   Berbezier I.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 46-50

Elsevier

Access to resources Recommend Favorite

Role of hydrogen during Si capping of strained Ge or Si 1-x Ge x hut clusters

By Dentel D.   Bischoff J.L.   Kubler L.   Bolmont D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 49-52

Elsevier

Access to resources Recommend Favorite