Atomistic models of dislocation formation at crystal surface ledges in Si1-xGex/Si(100) heteroepitaxial thin films

Author： Gao H. Ozkan C. S. Nix W. D. Zimmerman J. A. Freund L. B.

ISSN： 0141-8610

Source： Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol.79, Iss.2, 1999-02, pp. : 349-370

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