Base transit time of a bipolar transistor considering field dependent mobility

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International Journal of Electronics, Vol. 93, Iss. 11, 2006-11 ,pp. : 723-735

Taylor & Francis Ltd

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Empirical expression for base transit time in bipolar transistors

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Effect of bandgap discontinuity on the cut-off frequency, base transit time and junction capacitance of npn AlGaAs/GaAs heterojunction bipolar transistors

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Quantum study of ultra-thin-base SiGe heterojunction bipolar transistor

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A unified model for the vertical base widening effect in silicon bipolar transistor at 77 and 300K

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