Investigation of intrinsic-carrier concentration, minority-carrier concentration and built-in electric field for heavily boron-doped silicon with non-parabolic energy bands at low temperatures

Author： Zhixiong Xiao   Tongli Wei  

Publisher： Taylor & Francis Ltd

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.81, Iss.6, 1996-12, pp. : 647-656

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