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International Journal of Electronics, Vol. 87, Iss. 10, 2000-10 ,pp. : 1153-1162

Taylor & Francis Ltd

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Effects of high temperature annealing on the device characteristics of Ga 0.52 In 0.48 P/GaAs and Al 0.52 In 0.48 P/GaAs heterojunction bipolar transistors

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High-frequency noise analysis of Si/SiGe heterojunction bipolar transistors

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Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates

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Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor. Part I: Temperature profile

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International Journal of Electronics, Vol. 93, Iss. 7, 2006-07 ,pp. : 439-455

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