A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

By He Jin   Zhang Lining   Zhang Jian   Ma Chenyue   Liu Feilong   Chan Mansun  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 483-490

Taylor & Francis Ltd

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Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

By Munteanu D.   Autran J. L.   Harrison S.   Nehari K.   Tintori O.   Skotnicki T.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 831-837

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A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs

By He J.   Bian W.   Chen Y.   Wei Y.   Zhang L.   Zhang J.   Chan M.  

Molecular Simulation, Vol. 34, Iss. 1, 2008-01 ,pp. : 63-72

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Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects

By Autran J. L.   Nehari K.   Munteanu D.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 839-843

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2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

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Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 825-830

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