An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation

By He J.   Bian W.   Zhang J.   Feng J.   Zhang X.   Wu W.   Chan M.  

Molecular Simulation, Vol. 34, Iss. 1, 2008-01 ,pp. : 81-87

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A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

By He Jin   Zhang Lining   Zheng Rui   Zhang Jian   Chan Mansun  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 448-455

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A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs

By He J.   Bian W.   Chen Y.   Wei Y.   Zhang L.   Zhang J.   Chan M.  

Molecular Simulation, Vol. 34, Iss. 1, 2008-01 ,pp. : 63-72

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A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

By Munteanu D.   Moreau M.   Autran J. L.  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 491-497

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A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

By He J.   Chan M. S.   Hu C.   Zhang X.   Wang Y. Y.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 845-850

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