Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

Author: Weckwerth M.V.   Simmons J.A.   Harff N.E.   Sherwin M.E.   Blount M.A.   Baca W.E.   Chui H.C.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.20, Iss.4, 1996-12, pp. : 561-567

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Abstract