Electronic structure model for n- and p-type silicon quantum dots

Author： Fang T.-.N.   Paul Ruden P.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.22, Iss.4, 1997-12, pp. : 589-596

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Ultrasonic spectroscopy in p-type silicon

By  

Journal de Physique Lettres, Vol. 40, Iss. 3, 1979-02 ,pp. : 53-55

Edp Sciences

Access to resources Recommend Favorite

NOISE AND DIFFUSION IN p-TYPE SILICON

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-165-C4-168

Edp Sciences

Access to resources Recommend Favorite

Amorphous silicon on p-type crystalline silicon heterojunction

By  

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 641-644

Edp Sciences

Access to resources Recommend Favorite

Quantization of the electronic spectrum and localization of electrons and holes in silicon quantum dots

By Gritsenko V.   Zhuravlev K.   Nadolinnyi V.  

Physics of the Solid State, Vol. 53, Iss. 4, 2011-04 ,pp. : 860-863

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-511-C4-514

Edp Sciences

Access to resources Recommend Favorite