Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates

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Journal de Physique III, Vol. 7, Iss. 12, 1997-12 ,pp. : 2317-2324

Edp Sciences

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THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs

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Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-87-C5-92

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Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

By Nakashima H.   Takeuchi T.   Inoue K.   Fukunaga T.   Bimberg D.   Christen J.  

Superlattices and Microstructures, Vol. 22, Iss. 4, 1997-12 ,pp. : 511-515

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Effect of the p-n junction breakdown mechanism on the Er³⁺ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

By Shmagin V.   Remizov D.   Krasil’nik Z.   Kuznetsov V.   Shabanov V.   Krasil’nikova L.   Kryzhkov D.   Drozdov M.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 109-112

MAIK Nauka/Interperiodica

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Growth of In 0.52 Al 0.48 As on InP substrates by molecular beam epitaxy: some effects of V/III flux ratio variation

By Yoon S.F.  

Superlattices and Microstructures, Vol. 23, Iss. 2, 1998-02 ,pp. : 535-542

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