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Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84001-84008

IOP Publishing

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A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing

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Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95016-95020

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Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

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An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

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Analytical modeling of thermal noise in deep submicron MOSFETs

By Lu Zhi-Qiang  

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