Author： Aono M. Yamaguchi K. Kitazawa N. Watanabe Y.
Publisher： Maney Publishing
ISSN： 1743-2847
Source： Materials Science and Technology, Vol.20, Iss.9, 2004-09, pp. : 1119-1122
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Abstract
Carbon nitride (CNx) films were prepared by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) from nitrogen gas and toluene vapour onto Si(100) substrates. The films were characterised by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectrometry (FT-IR). XRD measurements suggested that the films have an amorphous structure. Toluene was reduced by rf plasma of 180 W. The CNx films prepared contain very little hydrogen and hydrocarbon. It is found that increases in nitrogen gas pressure and rf-power levels lead to an increase in the nitrogen content in the deposited films. The maximum value of nitrogen content
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