The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

Author: Pei-Qiang Xu   Yang Jiang   Zi-Guang Ma   Zhen Deng   Tai-Ping Lu   Chun-Hua Du   Yu-Tao Fang   Peng Zuo   Hong Chen  

Publisher: IOP Publishing

ISSN: 0256-307X

Source: Chinese Physics Letters, Vol.30, Iss.2, 2013-02, pp. : 28101-28104

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