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IOP Publishing

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Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

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Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

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Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

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