Anisotropic Electrical Transport in MgB2 Single Crystals

Author: Eltsev Y.   Nakao K.   Lee S.   Masui T.   Chikumoto N.   Tajima S.   Koshizuka N.   Murakami M.  

Publisher: Springer Publishing Company

ISSN: 0022-2291

Source: Journal of Low Temperature Physics, Vol.131, Iss.5-6, 2003-06, pp. : 1069-1073

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Abstract

We report on study of transport properties of MgB2 single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio ρcab=3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below Tc, the in-plane as well as the out-of-plane Hall resistivity, ρxy and ρzx, display no sign change anomaly. Furthermore, both ρxy and ρzx have been found to scale with corresponding longitudinal resistivity with the same exponent β=1.5.

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