Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

Author： Maung Latt K.   Sher-Yi C.   Osipowicz T.   Lee K.   Lee Y.K.  

Publisher： Springer Publishing Company

ISSN： 0022-2461

Source： Journal of Materials Science, Vol.36, Iss.23, 2001-12, pp. : 5705-5712

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure

By Latt K.M.   Park H.S.   Seng H.L.   Osipowicz T.   Lee Y.K.  

Journal of Materials Science, Vol. 37, Iss. 19, 2002-10 ,pp. : 4181-4188

Springer Publishing Company

Access to resources Recommend Favorite

Microstructure of ZnO/Cu/TaN/SiO 2 /Si multilayers prepared by sputter deposition

By Wu W-Y.  

Journal of Materials Science Letters, Vol. 22, Iss. 22, 2003-11 ,pp. : 1603-1606

Springer Publishing Company

Access to resources Recommend Favorite

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO_2

By Maung Latt K.   Park H.S.   Li S.   Rong L.   Osipowicz T.   Zhu W.G.   Lee Y.K.  

Journal of Materials Science, Vol. 37, Iss. 10, 2002-05 ,pp. : 1941-1949

Springer Publishing Company

Access to resources Recommend Favorite

Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure

By Lee Y.K.   Latt K.M.   Jaehyung K.   Osipowicz T.   Chiam S-Y.   Lee K.  

Journal of Materials Science, Vol. 35, Iss. 23, 2000-12 ,pp. : 5857-5860

Springer Publishing Company

Access to resources Recommend Favorite

The effect of He or Ar/O2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2

By Kim H-U.   Yi C.   Rhee S-W.  

Journal of Materials Science: Materials in Electronics, Vol. 15, Iss. 1, 2004-01 ,pp. : 37-41

Springer Publishing Company

Access to resources Recommend Favorite