Author： Oh J-H. Oh B-J. Choi D-J. Kim G-H. Song H-S.
Publisher： Springer Publishing Company
ISSN： 0022-2461
Source： Journal of Materials Science, Vol.36, Iss.7, 2001-04, pp. : 1695-1700
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Abstract
In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = P_H2/P_MTS = Q_H2/Q_MTS) on the growth behavior using MTS (metyltrichlorosilane, CH_3SiCly_3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3–10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1–2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.
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