Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Author： Kim N. H. Kang T. W. Kim T. W.

Publisher： Springer Publishing Company

ISSN： 0022-2461

Source： Journal of Materials Science, Vol.39, Iss.20, 2004-10, pp. : 6343-6345

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