Author： Premchander P. Baskar K.
Publisher： Springer Publishing Company
ISSN： 0022-2461
Source： Journal of Materials Science, Vol.45, Iss.24, 2010-12, pp. : 6799-6804
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Abstract
GaN(0001) epilayers grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) have been irradiated with 75 MeV Sn5+ ions at the fluences of 1011, 1012, and 1013 ions/cm2. Structural and optical studies reveal that GaN epilayer withstands 75 MeV Sn5+ ion irradiations up to 1011 ions/cm2 ion fluences. High resolution X-ray diffraction results showed that the FWHM corresponding to (0002) plane increased from 227 to 279 arc-seconds after Sn-ions irradiation. Red shift was observed in the yellow luminescence (YL) emission by photoluminescence (PL), corresponds to the concentration of ion fluences. Donor-bound exciton (DBE) and free exciton (FEA, FEB and FEC) emissions were observed for as-grown and irradiated GaN samples up to 1012 ions/cm2 at 2K PL measurements. Free excitons are dominated by low-temperature PL measurements for as-grown and irradiated GaN samples at 1011 and 1012 ion fluences. Atomic force microscopy images show the RMS roughness increases with increasing Sn-ion fluences by removing as-grown GaN surface defects.
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