

Author: Peng Sheng Li Xiao Zhang Deng Zhang Yan
Publisher: Springer Publishing Company
ISSN: 1040-0400
Source: Structural Chemistry, Vol.20, Iss.5, 2009-10, pp. : 789-794
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content


Endohedral Complex of Fullerene C60 with Tetrahedral N4, N4@C60
Structural Chemistry, Vol. 16, Iss. 6, 2005-12 ,pp. :




Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction
By Ichikawa A. Hirose Y. Ikeda T. Noda
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :


The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4
By Potapov A.V. Orlov L.K. Ivin S.V.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :