Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Kathawala Gulzar A.   Mohamed Mohamed   Ravaioli Umberto  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 85-89

Springer Publishing Company

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Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Tsuchiya Hideaki   Horino Motoki   Miyoshi Tanroku  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 91-95

Springer Publishing Company

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A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Boriçi M.   Watling J.R.   Wilkins R.   Yang L.   Barker J.R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 163-167

Springer Publishing Company

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A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Li Yiming   Tang Ting-Wei   Yu Shao-Ming  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 491-495

Springer Publishing Company

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Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Akis R.   Ferry D.K.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 497-500

Springer Publishing Company

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