Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Watling J.R.   Yang L.   Boriçi M.   Barker J.R.   Asenov A.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 475-479

Springer Publishing Company

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Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Kathawala Gulzar A.   Mohamed Mohamed   Ravaioli Umberto  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 85-89

Springer Publishing Company

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Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Tsuchiya Hideaki   Horino Motoki   Miyoshi Tanroku  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 91-95

Springer Publishing Company

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Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Bufler F.M.   Schenk A.   Fichtner W.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 81-84

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Nakatsuji Hiroshi   Kamakura Yoshinari   Taniguchi Kenji  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 109-112

Springer Publishing Company

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