Scaling MOSFETs to the Limit: A Physicists's Perspective: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fischetti M.V.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 73-79

Springer Publishing Company

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Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks

By Brown Andrew   Watling Jeremy   Asenov Asen  

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Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

By Aldegunde M.   García-Loureiro A.   Kalna K.   Asenov A.  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 311-314

Springer Publishing Company

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Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

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Journal of Computational Electronics, Vol. 11, Iss. 1, 2012-03 ,pp. : 106-117

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Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study

By Riddet C.   Brown A.   Alexander C.   Watling J.   Roy S.   Asenov A.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 341-345

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