Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor

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Springer Publishing Company

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3D Electrostatics of Carbon Nanotube Field-Effect Transistors

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Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method

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Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism

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Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 373-377

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Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

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