Wave-mixing effects on electronic noise in semiconductors

Author: Adorno D.   Capizzo M.   Zarcone M.  

Publisher: Springer Publishing Company

ISSN: 1569-8025

Source: Journal of Computational Electronics, Vol.5, Iss.4, 2006-12, pp. : 475-477

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Abstract

The results of a Monte Carlo analysis of hot-electron intrinsic noise in a n-type GaAs bulk driven by two mixed large-amplitude alternating electric fields having frequency in the subterahertz range are presented. The noise properties are investigated by studying the velocity autocorrelation function and the noise spectrum. We explored the relations among the frequency response and the velocity fluctuations as a function of the frequencies and intensities of the mixed fields. When the semiconductor is driven by two mixed ciclostationary electric fields, a resonant-like enhancement of the spectra near the two frequencies of the applied fields is found.

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