Author： Pagava T. Chkhartishvili L. Maisuradze N.
Publisher： Taylor & Francis Ltd
ISSN： 1042-0150
Source： Radiation Effects and Defects in Solids, Vol.161, Iss.12, 2006-12, pp. : 709-713
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Abstract
Isochronous annealing of radiation defects with almost isoenergetical levels (indistinguishable from each other by means of temperature dependence of the majority charge carriers concentration) in silicon is studied. The concentrations of G- and A-centres with a level Ec−0.17ÂeV in n-Si and some (unidentified) vacancy-type and V2+B complexes with a level Ev+0.22ÂeV in p-Si are determined.
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