50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs

Author： Praveen K. C.   Pushpa N.   Tripathi Ambuj   Revannasiddaiah D.   Cressler John D.   Gnana Prakash A. P.  

Publisher： Taylor & Francis Ltd

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.166, Iss.8-9, 2011-09, pp. : 710-717

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Abstract

The total dose effects of 50 MeV lithium (Li3+) ions on 200 GHz (8HP) silicon–germanium heterojunction bipolar transistors (SiGe HBTs) are studied in total doses ranging from 300 krad to 10 Mrad. The different electrical characteristics, such as the Gummel characteristics, dc current gain (h FE), neutral base recombination, avalanche multiplication of carriers (M−1) and output characteristics (I C–V CE), were studied before and after Li3+ ion irradiation. The results of 50 MeV Li3+ ion irradiation on SiGe HBTs are compared with 60Co gamma irradiation results in the same dose ranges.

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