Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

By Nishikawa T.   Otsuka T.   Morita K.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 41-50

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FERROELECTRIC PROPERTIES OF Pt/PbZr 0.53 Ti 0.47 O 3 /PbO/Si (MFIS) STRUCTURES ACCORDING TO THE SUBSTRATE TEMPERATURE DURING THE PBO BUFFER LAYER DEPOSITION

By PARK CHUL-HO   WON MI-SOOK   OH YOUNG-HUN   SON YOUNG-GOOK  

Integrated Ferroelectrics, Vol. 75, Iss. 1, 2005-10 ,pp. : 11-16

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Ferroelectric Bi Modified YMnO3 Thin Films Grown on Si (001) Using Y2O3 Buffer Layer for Metal-Ferroelectric-Insulator-Semiconductor Structure

By Choi Taekjib   Shin Sanghun   Kim Young Sung   Lee Jaichan  

Integrated Ferroelectrics, Vol. 45, Iss. 1, 2002-01 ,pp. : 23-29

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Fabrication and Characterization of (Bi,La)4Ti3O12 Films Using LaAlO3 Buffer Layers for MFIS Structures

By PARK BYUNG-EUN   ISHIWARA HIROSHI  

Integrated Ferroelectrics, Vol. 62, Iss. 1, 2004-01 ,pp. : 141-147

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FORMATION OF (Bi,La) 4 Ti 3 O 12 FILMS ON Si(100) SUBSTRATES USING ZrO 2 BUFFER LAYERS

By YOON JOO-WON   SONG YOUNG-UK   PARK BYUNG-EUN   KIM CHUL-JU  

Integrated Ferroelectrics, Vol. 75, Iss. 1, 2005-10 ,pp. : 123-130

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