Near-infrared photodetectors based on polycrystalline Ge evaporated on Si <100> substrates

Author： Masini Gianlorenzo Colace Lorenzo Galluzzi Fabrizio Assanto Gaetano

ISSN： 1463-6417

Source： Philosophical Magazine B, Vol.80, Iss.4, 2000-04, pp. : 791-797

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Growth mechanisms of SiGe on (111) and (100) Si substrates

By Gallas B. Berbezier I. Ronda A. Derrien J.

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 22-26

Elsevier

Access to resources Recommend Favorite

Near-infrared tunable response photodetectors based on amorphous/crystalline silicon heterostructures prepared by the r.f. magnetron sputtering technique

By Budaguan B.G. Sherchenkov A.A.

Thin Solid Films, Vol. 299, Iss. 1, 1997-05 ,pp. : 173-177

Elsevier

Access to resources Recommend Favorite

Investigation of time characteristics of photodetectors based on Ge/Si nanoheterostructures

By Donchenko V. Yakimov A. Zemlyanov A. Kirienko V.

Russian Physics Journal, Vol. 53, Iss. 5, 2010-10 ,pp. : 504-507

Springer Publishing Company

Access to resources Recommend Favorite

Optical characterization by spectroscopic ellipsometry of polycrystalline Si 1-x Ge x of variable Ge composition up to 100% Ge

By Ferrieu F. Morin C. Regolini J.L.

Thin Solid Films, Vol. 315, Iss. 1, 1998-03 ,pp. : 316-321

Elsevier

Access to resources Recommend Favorite

Electrical properties of evaporated polycrystalline Ge thin-films

By Kobayashi H. Uchida T. Yasuoka Y. Inoue N.

Thin Solid Films, Vol. 300, Iss. 1, 1997-05 ,pp. : 138-143

Elsevier

Access to resources Recommend Favorite