Structural studies of Al thin layer on misoriented GaAs(100) substrate by transmission electron microscopy

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John Wiley & Sons Inc

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Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100)

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Elsevier

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Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy

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In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures

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Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 9, 2000-09 ,pp. : 2159-2200

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Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

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Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 360-365

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