Galvanomagnetic properties and electronic structure of Pb_1−x−ySn_xV_yTe under pressure

By Skipetrov E P   Golovanov A N   Kovalev B B   Knotko A V   Slyn’ko E I   Slyn’ko V E  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15019-15027

IOP Publishing

Access to resources Recommend Favorite

Electrical behavior of modulation-and delta-doped Al _x Ga_{1 − x} As/In _y Ga_{1 − y} As/GaAs PHEMT structures

By Galiev G.   Vasil’evskii I.   Klimov E.   Mokerov V.  

Russian Microelectronics, Vol. 35, Iss. 2, 2006-03 ,pp. : 67-73

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural and Luminescent Properties of SiO_xN_y(Si) Nanocomposite Films

By Baru V.   Bayliss S.   Zhitov V.   Zakharov L.   Kartopu G.   Pokalyakin V.   Sapelkin A.   Stepanov G.   Timofeev A.   Shevchenko O.  

Russian Microelectronics, Vol. 34, Iss. 5, 2005-09 ,pp. : 272-278

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electroluminescence mechanisms in SiO _x N _y (Si) nanocomposite films

By Baru V.   Zhitov V.   Zakharov L.   Izotov A.   Pokalyakin V.   Stepanov G.   Shevchenko O.   Shteinman E.  

Russian Microelectronics, Vol. 35, Iss. 2, 2006-03 ,pp. : 78-86

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Material Characterization of Ge_1−x Sn _x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

By Mosleh Aboozar   Ghetmiri Seyed   Conley Benjamin   Hawkridge Michael   Benamara Mourad   Nazzal Amjad   Tolle John   Yu Shui-Qing   Naseem Hameed  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 938-946

Springer Publishing Company

Access to resources Recommend Favorite