Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT

Author: Pandey Devashish   Lenka T. R.  

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.35, Iss.10, 2014-10, pp. : 104001-104004

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