Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Author: Chongbiao Luan   Zhaojun Lin   Yuanjie Lü   Zhihong Feng   Jingtao Zhao   Yang Zhou   Ming Yang  

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.35, Iss.9, 2014-09, pp. : 94007-94012

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